久久久久久精品人妻免费网站,青娱乐在线极品盛宴,18禁美女裸身图无遮挡,亚洲乱码无码一区二区三区

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
PDF

Introduction 1、TO-247package 50A 650V IGBT discrete;
2、The voltage level is 650V, the current level is 50A@Tc=100℃;
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications;
4、Low conduction loss, low switching loss, high reliability;
5、Use environmentally friendly materials and meet RoHS standards;
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ;
3、High voltage 650V;
4、Low conduction loss, low switching loss, meet the high frequency application conditions;
5、The latest generation of micro trench design, a cost-effective product;
SPECIFICATION

DGW50N65CTL0

Related new products

SOT-227 FJ Package Vehicle Module

DFN1006-3L Package Small Signal Device

N60V SGT MOSFET

Low VCE(sat)?3A?Bipolar?Transistor

TOLL Package SiC MOSFET

SOD-123FL package power ESD

TO-252 Package Power Transistor for Motor Driver & High Power Frequency Converter

IGBT low loss series

New N40V SGT MOSFETs for Sweeper

SOD-123HE TVS Diode